Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories
Issued Date
2024-01-01
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eISSN
21951071
Scopus ID
2-s2.0-85182687728
Journal Title
Advanced Optical Materials
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SCOPUS
Bibliographic Citation
Advanced Optical Materials (2024)
Suggested Citation
Cholsuk C., Çakan A., Suwanna S., Vogl T. Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories. Advanced Optical Materials (2024). doi:10.1002/adom.202302760 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/95893
Title
Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories
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Abstract
A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the Λ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.