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Publication Metadata only Effect of opposite side electrodes in organic field-effect transistor structure(2009-10-12) Rawat Jaisutti; Wittawat Yamwong; Sirapat Pratontep; Tanakom Osotchan; Mahidol University; Thailand National Science and Technology Development Agency; Thailand National Electronics and Computer Technology CenterFor nanoscale devices, the source and drain electrodes in organic filed effect transistor (OFET) are usually placed on the opposite side of the insulator and gate electrode. While the conventional model to describe FET was extracted from the planar... structure with all electrodes laid in the same side. Therefore the effect of the opposite side electrode OFET structure was investigated by using two-dimensional numerical simulation and then comparing to the current-voltage characteristic of fabricated topPublication Metadata only Detection of DNA Hybridization Using Protein A Modified Ion Sensitive Field Effect Transistor(2015-01-01) Nang Mo Hom; Chamras Promptmas; Kesara Wat-Aksorn; Mahidol University© 2015, Copyright © Taylor & Francis Group, LLC. A DNA sensor based on an ion sensitive field effect transistor (ISFET) with protein A modification for characterization of DNA hybridization is reported. The surface of the ISFET was modifiedPublication Metadata only Electrochemically functionalized single-walled carbon nanotubes for ultrasensitive detection of BTEX vapors(2021-07-15) Tapan Sarkar; Sira Srinives; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha UniversitySingle-walled carbon nanotubes (SWNTs) have been functionalized electrochemically with porphyrin and were employed as the channel to fabricate the chemical field-effect transistor. Tetraphenylporphyrin was chosen for functionalization purpose... response for all analytes starting from 1.25 ppm to 15 ppm of concentration. A sub-ppm limit of detection was also observed. The systematic study of field effect transistor (FET) measurements indicates that the sensing mechanism is dominatedPublication Metadata only Nanothin polyaniline film for highly sensitive chemiresistive gas sensing(2013-06-01) Sira Srinives; Tapan Sarkar; Ashok Mulchandani; University of California, Riverside; Mahidol UniversityThis study developed a facile technique for site-specific synthesis of nanometer-thick polyaniline (PANI) film for fabrication of field-effect transistor/chemiresistor sensors. The nanothin film had a thickness of 9-20nm and was of carpet-likePublication Metadata only Time-of-flight measurement of poly(3-hexylthiophene) thin films(2008-12-01) M. Sittishoktram; U. Asawapirom; T. Osotchan; Mahidol University; National Nanotechnology CenterPoly(3-hexylthiophene) (P3HT) is one of the most studied conjugated polymer for molecular electronics especially for organic field effect transistors (OFETs) and organic light-emitting devices (OLEDs). This is mainly due to the fact that P3HTPublication Metadata only Calixarene-functionalized single-walled carbon nanotubes for sensitive detection of volatile amines(2018-09-01) Tapan Sarkar; P. Muhamed Ashraf; Sira Srinives; Ashok Mulchandani; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha Universityand ∼0.4 ppm for NH3, TMA and DMA respectively. Further, the field effect transistor analyses indicated that the sensing mechanism of the SWCNT-calixarene hybrid is dominated by the electrostatic gating effect. The sensing capability of the hybrid at lowPublication Metadata only Single-walled Carbon Nanotube-Calixarene Based Chemiresistor for Volatile Organic Compounds(2018-09-01) Tapan Sarkar; Sira Srinives; Armando Rodriquez; Ashok Mulchandani; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha UniversityAdministration (OSHA) permissible exposure limit (PEL) except for benzene. A mechanistic study for BTEX was performed via field-effect transistor measurements, and this suggested that the sensing mechanism is dominated by an electrostatic gating effect. In our... beneficial effects: (a) The use of SWCNT eliminates the conductivity issue, and this enables low-power chemiresistive sensing; (b) the excellent affinity of calixarenes for certain analytes improves sensitivity. The hybrid material was fabricated by solventPublication Metadata only Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs(2006-11-14) A. Yangthaisong; T. Osotchan; Ubon Rajathanee University; Mahidol UniversityThe motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass productionPublication Metadata only Sequential injection system for analysis of degree brix, orthophosphate and ph in raw sugarcane juice applicable to sugar industry(2021-11-01) Phoonthawee Saetear; Nattinee Saechua; Kamonthip Sereenonchai; Mahidol University; Thammasat University. Compensation of the schlieren effect from sucrose for determination of orthophosphate was achieved by using a dual-wavelength spectrometric detection. Second detector is a pH-sensing device, called ion-selective field-effect transistors (ISFET). The ISFET...) sucrose) was based on manipulation of the schlieren effect at the interface between plugs of sample and water. Orthophosphate analysis was carried out based on the molybdenum blue method with significant reduction in consumption of the reagentsPublication Metadata only A 1.5 v 5.2 nW 60 dB-DR Lowpass Filter with Self-Compansated Gain in 0.35 μm CMOS Suitable for Biomedical Applications(2018-04-26) Surachoke Thanapithak; Chutham Sawigun; Mahidol University; Mahanakorn University of Technology© 2018 IEEE. In the design of a transistorized filter comprising CMOS devices in a standard technology, the bulk effect possibly introduces resistive loss to the circuit. Compensating for this loss thereby enhancing the filter's passband gain, a