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Item Metadata only Development of ion sensitive field effect transistor device for real time growth detection of mycobacterium tuberculosis(Mahidol University. Mahidol University Library and Knowledge Center, 2023) Pawasuth Saengdee; Chamras Promptmas; Watchara Kasinrerk; Wutthinan JeamsaksiriThe development of rapid and highly reliable sensor is essential for preventing the transmission of M. tuberculosis which is a major health issue in developing countries. In this study, the ion sensitive field effect transistor (ISFET) was developed... into the culture system to obtain a more effective M. tuberculosis sensor.Publication Metadata only Effect of opposite side electrodes in organic field-effect transistor structure(2009-10-12) Rawat Jaisutti; Wittawat Yamwong; Sirapat Pratontep; Tanakom Osotchan; Mahidol University; Thailand National Science and Technology Development Agency; Thailand National Electronics and Computer Technology CenterFor nanoscale devices, the source and drain electrodes in organic filed effect transistor (OFET) are usually placed on the opposite side of the insulator and gate electrode. While the conventional model to describe FET was extracted from the planar... structure with all electrodes laid in the same side. Therefore the effect of the opposite side electrode OFET structure was investigated by using two-dimensional numerical simulation and then comparing to the current-voltage characteristic of fabricated topPublication Metadata only Detection of DNA Hybridization Using Protein A Modified Ion Sensitive Field Effect Transistor(2015-01-01) Nang Mo Hom; Chamras Promptmas; Kesara Wat-Aksorn; Mahidol University© 2015, Copyright © Taylor & Francis Group, LLC. A DNA sensor based on an ion sensitive field effect transistor (ISFET) with protein A modification for characterization of DNA hybridization is reported. The surface of the ISFET was modifiedItem Metadata only A silicon nitride ion sensitive field effect transistor-based immunosensor for determination of urinary albumin(2022-12-01) Saengdee P.; Thanapitak S.; Ongwattanakul S.; Srisuwan A.; Pankiew A.; Thornyanadacha N.; Chaisriratanakul W.; Jeamsaksiri W.; Promptmas C.; Mahidol UniversityThe development of an immunosensor-based biosensor to detect the human serum albumin (HSA) was developed as a low-cost and label-free electrical detection through silicon nitride ion-sensitive field-effect transistor (Si3N4-ISFET). This sensorItem Metadata only Biosensors Based on Ion-Sensitive Field-Effect Transistors for HLA and MICA Antibody Detection in Kidney Transplantation(2022-10-01) Min T.Z.M.M.M.; Phanabamrung S.; Chaisriratanakul W.; Pankiew A.; Srisuwan A.; Chauyrod K.; Pongskul C.; Promptmas C.; Leelayuwat C.; Mahidol UniversityThis work demonstrates the ability of the Ion-Sensitive Field-Effect Transistor (ISFET)-based immunosensor to detect antibodies against the human leukocyte antigen (HLA) and the major histocompatibility complex class-I-related chain A (MICAPublication Metadata only Electrochemically functionalized single-walled carbon nanotubes for ultrasensitive detection of BTEX vapors(2021-07-15) Tapan Sarkar; Sira Srinives; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha UniversitySingle-walled carbon nanotubes (SWNTs) have been functionalized electrochemically with porphyrin and were employed as the channel to fabricate the chemical field-effect transistor. Tetraphenylporphyrin was chosen for functionalization purpose... response for all analytes starting from 1.25 ppm to 15 ppm of concentration. A sub-ppm limit of detection was also observed. The systematic study of field effect transistor (FET) measurements indicates that the sensing mechanism is dominatedPublication Metadata only Nanothin polyaniline film for highly sensitive chemiresistive gas sensing(2013-06-01) Sira Srinives; Tapan Sarkar; Ashok Mulchandani; University of California, Riverside; Mahidol UniversityThis study developed a facile technique for site-specific synthesis of nanometer-thick polyaniline (PANI) film for fabrication of field-effect transistor/chemiresistor sensors. The nanothin film had a thickness of 9-20nm and was of carpet-likePublication Metadata only Time-of-flight measurement of poly(3-hexylthiophene) thin films(2008-12-01) M. Sittishoktram; U. Asawapirom; T. Osotchan; Mahidol University; National Nanotechnology CenterPoly(3-hexylthiophene) (P3HT) is one of the most studied conjugated polymer for molecular electronics especially for organic field effect transistors (OFETs) and organic light-emitting devices (OLEDs). This is mainly due to the fact that P3HTPublication Metadata only Calixarene-functionalized single-walled carbon nanotubes for sensitive detection of volatile amines(2018-09-01) Tapan Sarkar; P. Muhamed Ashraf; Sira Srinives; Ashok Mulchandani; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha Universityand ∼0.4 ppm for NH3, TMA and DMA respectively. Further, the field effect transistor analyses indicated that the sensing mechanism of the SWCNT-calixarene hybrid is dominated by the electrostatic gating effect. The sensing capability of the hybrid at lowPublication Metadata only Single-walled Carbon Nanotube-Calixarene Based Chemiresistor for Volatile Organic Compounds(2018-09-01) Tapan Sarkar; Sira Srinives; Armando Rodriquez; Ashok Mulchandani; University of California, Riverside; Mahidol University; Guru Gobind Singh Indraprastha UniversityAdministration (OSHA) permissible exposure limit (PEL) except for benzene. A mechanistic study for BTEX was performed via field-effect transistor measurements, and this suggested that the sensing mechanism is dominated by an electrostatic gating effect. In our... beneficial effects: (a) The use of SWCNT eliminates the conductivity issue, and this enables low-power chemiresistive sensing; (b) the excellent affinity of calixarenes for certain analytes improves sensitivity. The hybrid material was fabricated by solvent