Proceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)
Suggested Citation
Asawin Sinsarp, Takashi Manago, Fumiyoshi Takano, Hiro Akinaga Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide. Proceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008). doi:10.1117/12.799422 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/19215
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Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.
