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Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide

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dc.contributor.authorAsawin Sinsarpen_US
dc.contributor.authorTakashi Managoen_US
dc.contributor.authorFumiyoshi Takanoen_US
dc.contributor.authorHiro Akinagaen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherNational Institute of Advanced Industrial Science and Technologyen_US
dc.contributor.otherTokyo University of Science, Yamaguchien_US
dc.date.accessioned2018-07-12T02:26:37Z
dc.date.available2018-07-12T02:26:37Z
dc.date.issued2008-05-15en_US
dc.description.abstractWe fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.en_US
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)en_US
dc.identifier.doi10.1117/12.799422en_US
dc.identifier.issn0277786Xen_US
dc.identifier.other2-s2.0-43249119409en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/19215
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43249119409&origin=inwarden_US
dc.subjectEngineeringen_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectrical spin injection from an iron-rich iron-platinum thin film into gallium arsenideen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43249119409&origin=inwarden_US

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