Publication: Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
Issued Date
2008-03-01
Resource Type
ISSN
02188635
Other identifier(s)
2-s2.0-44249104021
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Mahidol University
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SCOPUS
Bibliographic Citation
Journal of Nonlinear Optical Physics and Materials. Vol.17, No.1 (2008), 105-109
Suggested Citation
Asawin Sinsarp, Takashi Manago, Fumiyoshi Takano, Hiro Akinaga Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide. Journal of Nonlinear Optical Physics and Materials. Vol.17, No.1 (2008), 105-109. doi:10.1142/S0218863508003993 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/19406
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Title
Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
Abstract
We fabricated an FePt/MgO tunneling junction (Fe 55 atomic %) on a GaAs-based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%. © 2008 World Scientific Publishing Company.