Publication:
Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide

dc.contributor.authorAsawin Sinsarpen_US
dc.contributor.authorTakashi Managoen_US
dc.contributor.authorFumiyoshi Takanoen_US
dc.contributor.authorHiro Akinagaen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherNational Institute of Advanced Industrial Science and Technologyen_US
dc.contributor.otherTokyo University of Science, Yamaguchien_US
dc.date.accessioned2018-07-12T02:33:56Z
dc.date.available2018-07-12T02:33:56Z
dc.date.issued2008-03-01en_US
dc.description.abstractWe fabricated an FePt/MgO tunneling junction (Fe 55 atomic %) on a GaAs-based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%. © 2008 World Scientific Publishing Company.en_US
dc.identifier.citationJournal of Nonlinear Optical Physics and Materials. Vol.17, No.1 (2008), 105-109en_US
dc.identifier.doi10.1142/S0218863508003993en_US
dc.identifier.issn02188635en_US
dc.identifier.other2-s2.0-44249104021en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/19406
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44249104021&origin=inwarden_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectrical spin injection from an iron-rich iron-platinum thin film into gallium arsenideen_US
dc.typeArticleen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44249104021&origin=inwarden_US

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