Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures
IEEE Journal of Quantum Electronics. Vol.36, No.7 (2000), 835-841
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W. Shi, Dao Hua Zhang, Tanakorn Osotchan Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures. IEEE Journal of Quantum Electronics. Vol.36, No.7 (2000), 835-841. doi:10.1109/3.848356 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/25938
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Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures
We report an application of the six-band Luttinger-Kohn model to the subband energy dispersions in the valence band for the p-type In0.15Ga0.85As-Al0.33Ga0.67As quantum-well (QW) structures. It was found that, in addition to the conventional biaxial compressive strain related to the lattice constant and well width of the structures, the p-type doping also caused a shift of the subband energy levels in the valence band by varying the barrier height. It was also found that the strain of the QW structures was not a constant but was sensitive to the p-type doping intensity, which also induced the shift of the subband energy levels. The calculated results, based on intersubband transitions of the heavy holes and taking the doping-related changes in strain and barrier height into account, were in good agreement with the experimental data, measured using Fourier transform infrared technique.
