Enhancement in power conversion efficiency and interfacial engineering investigations in La<inf>2</inf>NiMnO<inf>6</inf>-based PSC device
Issued Date
2025-04-01
Resource Type
eISSN
23524928
Scopus ID
2-s2.0-105001478208
Journal Title
Materials Today Communications
Volume
45
Rights Holder(s)
SCOPUS
Bibliographic Citation
Materials Today Communications Vol.45 (2025)
Suggested Citation
Kumar M., Kumar M., Singh D.V., Chaudhary V., Pundir S.K. Enhancement in power conversion efficiency and interfacial engineering investigations in La<inf>2</inf>NiMnO<inf>6</inf>-based PSC device. Materials Today Communications Vol.45 (2025). doi:10.1016/j.mtcomm.2025.112339 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/109380
Title
Enhancement in power conversion efficiency and interfacial engineering investigations in La<inf>2</inf>NiMnO<inf>6</inf>-based PSC device
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Corresponding Author(s)
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Abstract
The physical parameters and interfacial engineering in double perovskite La2NiMnO6 (LNMO) based perovskite solar cell (PSC) device FTO/ETL/LNMO/HTL/Au are extensively explored for better efficiency and deep defects analysis. The impact of physical parameters of respective layers such as thickness of light absorbing layer, series resistance and the overall device operating temperature of the designed device were thoroughly investigated. The detailed investigation and comprehensive analysis of the obtained results starkly demonstrate the remarkable PCE∼24.08 % along with other PV parameters VOC ∼ 0.718 V, JSC ∼ 42.29 mA/cm2, FF ∼ 79.21 %. The effects on quantum efficiency were also explored at different thickness of the perovskite absorber, series resistance and overall device operating voltages. Further, the admittance and impedance spectroscopic measurements were performed in order to gain insights of complex dynamic process involved at interface. Under such investigations, the capacitance-voltage (C-V), Mott-Schottky (MS) (1/C2-V), and conductance-voltage (G-V) spectra were obtained through the computational approach and investigated in detail. Finally, the temperature dependent capacitance-frequency (C-f) characteristics and voltage dependent Nyquist plots with semicircle nature were also analyzed.