Publication:
Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers

Issued Date

2017-03-01

Resource Type

Article

ISSN

00381098

DOI

10.1016/j.ssc.2017.01.029

Other identifier(s)

2-s2.0-85011411971

Rights

Mahidol University

Rights Holder(s)

SCOPUS

Bibliographic Citation

Solid State Communications. Vol.253, (2017), 37-41

Suggested Citation

Kritsanu Tivakornsasithorn, Taehee Yoo, Hakjoon Lee, Seonghoon Choi, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers. Solid State Communications. Vol.253, (2017), 37-41. doi:10.1016/j.ssc.2017.01.029 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/42242

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Title

Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers

Author(s)

Kritsanu Tivakornsasithorn
 Taehee Yoo
 Hakjoon Lee
 Seonghoon Choi
 Sanghoon Lee
 Xinyu Liu
 M. Dobrowolska
 Jacek K. Furdyna

Other Contributor(s)

Korea University
 Mahidol University
 University of Notre Dame

Abstract

© 2017 Elsevier Ltd Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-layers was studied by magnetization measurements. Minor hysteresis loops are observed to shift in a direction indicating the presence of ferromagnetic (FM) IEC in the structures. The strength of the FM IEC clearly exhibits an exponential decrease with respect to nonmagnetic InGaAs spacer thickness. The fitting of the spacer thickness dependence of the FM IEC to an exponential decay function provides a decay length of 3.3±0.3 nm, which is relatively large compared to metallic multilayers, indicating a long ranged IEC in systems based on GaMnAs.

Keyword(s)

Chemistry

Availability

URI

https://repository.li.mahidol.ac.th/handle/123456789/42242

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Scopus 2016-2017