Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride
1
Issued Date
2023-07-01
Resource Type
eISSN
2166532X
Scopus ID
2-s2.0-85164806042
Journal Title
APL Materials
Volume
11
Issue
7
Rights Holder(s)
SCOPUS
Bibliographic Citation
APL Materials Vol.11 No.7 (2023)
Suggested Citation
Kumar A., Cholsuk C., Zand A., Mishuk M.N., Matthes T., Eilenberger F., Suwanna S., Vogl T. Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride. APL Materials Vol.11 No.7 (2023). doi:10.1063/5.0147560 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/88041
Title
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride
Other Contributor(s)
Abstract
Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The fabrication of identical emitters at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. Our measurements of optically detected magnetic resonance have not revealed any addressable spin states. Using density functional theory, we attribute the experimentally observed emission lines to carbon-related defects, which are activated by the electron beam. Our scalable approach provides a promising pathway for fabricating room temperature single photon emitters in integrated quantum devices.