Publication: Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
2
Issued Date
2007-04-01
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ISSN
0168583X
Other identifier(s)
2-s2.0-33947691532
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Mahidol University
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SCOPUS
Bibliographic Citation
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol.257, No.1-2 SPEC. ISS. (2007), 195-198
Suggested Citation
S. Intarasiri, S. Dangtip, A. Hallén, J. Jensen, L. D. Yu, G. Possnert, S. Singkarat Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol.257, No.1-2 SPEC. ISS. (2007), 195-198. doi:10.1016/j.nimb.2007.01.022 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/25130
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Title
Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
Abstract
In this experiment, carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 °C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (1 1 1) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation. © 2007 Elsevier B.V. All rights reserved.