Publication: Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film
Issued Date
2009-04-01
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ISSN
02728842
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2-s2.0-59549084701
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Mahidol University
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SCOPUS
Bibliographic Citation
Ceramics International. Vol.35, No.3 (2009), 1281-1284
Suggested Citation
S. Dangtip, N. Sripongphan, N. Boonyopakorn, C. Thanachayanont Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film. Ceramics International. Vol.35, No.3 (2009), 1281-1284. doi:10.1016/j.ceramint.2008.04.018 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/27383
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Title
Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film
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Abstract
Thin TiO2films have been deposited on glass substrates by a radio-frequency (rf) magnetron sputtering technique. The films were coated under argon atmosphere at three different rf-powers: 80, 100 and 120 W, and three working pressures: 1.0 × 10-2, 2.5 × 10-3and 1.0 × 10-3mbar. Film structures were analyzed with XRD. At 100 and 120 W, films coated under low working pressure have developed the rutile phase with the preferred (1 1 0) orientation. However, at 80 W, the films have been observed only in an amorphous phase for all working pressures. This effect could be understood as sputtered TiO2molecules were more energetic at high rf-powers and encountered fewer collisions at low pressure before deposited onto the substrates. The films have also been annealed at 773 or 873 K. The post-deposition annealing has significantly improved crystallization of the TiO2films. In this contribution, results on optical and wetting properties of these films are also reported. © 2008 Elsevier Ltd and Techna Group S.r.l.